DMAPS: a fully depleted monolithic active pixel sensor—analog performance characterization
DMAPS: a fully depleted monolithic active pixel sensor—analog performance characterization
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DMAPS：完全耗尽型单片有源像素传感器 - 模拟性能表征
DOI：
10.1088/1748-0221/10/02/p02013
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发表时间：
2014
影响因子：
1.3
通讯作者：
N. Wermes
中科院分区：
文献类型：
--
作者：
M. Havranek;T. Hemperek;H. Krüger;Y. Fu;L. Germic;T. Kishishita;C. Marinas;T. Obermann;N. Wermes
单片式有源像素传感器(MAP)自20世纪90年代末以来已经发展起来，它是基于具有薄外延层(厚度为10-15μm)的硅衬底，电荷收集在电极上，尽管是通过无序和缓慢的扩散，而不是通过在定向电场中漂移。因此，这些常规地图的信号很小(≈1000e−)，并且辐射耐受性有限。本文介绍了一种基于高阻衬底的全耗尽单片式有源像素传感器(DMAPS)的发展，它允许产生完全耗尽的探测体积。这一概念克服了标准地图设计中通过扩散收集电荷的固有局限性。我们给出了采用商用150 nm CMOS工艺设计的原型芯片EPCB01的结果。该技术提供了薄的(≈50μm)高电阻率n型硅衬底，以及额外的深p井，允许在像素内集成完整的cmos电路。已经实现了具有几种不同类型的收集电极和像素电子器件的不同矩阵类型。给出了第一个实现的DMAPS像素的模拟性能的测量结果。
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10–15 μm) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal of these conventional MAPS is small (≈1000 e−) and the radiation tolerance is limited. In this paper, the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume is presented. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a prototype chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (≈50 μm) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry inside the pixel. Different matrix types with several variants of collection electrodes and pixel electronics have been implemented. Measurements of the analog performance of this first implementation of DMAPS pixels are presented.