Highly sensitive organic near-infrared phototransistors based on poly (3-hexylthiophene) and PbS quantum dots
Highly sensitive organic near-infrared phototransistors based on poly (3-hexylthiophene) and PbS quantum dots
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DOI：
10.1039/c2jm34773c
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发表时间：
2012-10-28
影响因子：
--
通讯作者：
Yan, Feng
中科院分区：
文献类型：
--
作者：
Sun, Zhenhua;Li, Jinhua;Yan, Feng
采用溶液法制备了基于聚3-己基噻吩（P3HT）和硫化铅量子点（PbS）的高灵敏度近红外（NIR）光电晶体管。在波长为895 nm的近红外照射下，光电晶体管的响应率高达2 × 10(4) A W-1，远远高于仅基于PbS量子点或有机半导体的光电探测器。传感机制归因于在PbS量子点中产生的光诱导电子，这增加了晶体管的阈值电压。这些光电晶体管因其高响应性、易于制造、低成本和灵活性而有望应用于红外传感器。
Highly sensitive near-infrared (NIR) phototransistors based on poly(3-hexylthiophene) (P3HT) and lead sulfide quantum dots (PbS QDs) were fabricated by a solution process. The phototransistors show high responsivity up to 2 x 10(4) A W-1 under NIR illumination with wavelength of 895 nm, which is much bigger than that of the photodetectors based on PbS QDs or organic semiconductors only. The sensing mechanism is attributed to the photo-induced electrons generated in the PbS QDs, which increase the threshold voltage of the transistor. These phototransistors may find promising applications as infrared sensors for their high responsivity, easy fabrication, low cost and flexibility.