Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping
Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping
复制标题
超重B掺杂Si/Ge多层膜的热电性能研究
DOI：
10.2320/matertrans.e-mra2008813
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发表时间：
2008
影响因子：
1.2
通讯作者：
K. Sasaki
中科院分区：
文献类型：
--
作者：
A. Matoba;H. Watase;M. Kitai;K. Sasaki
采用离子束溅射（IBS）方法，在室温至873 K的范围内，制备了Si/Ge和Si/GeB多层结构薄膜。研究了硼对Si/Ge超晶格结构的影响。XRD谱表明，在673 K以下制备的样品保持了周期性结构，而在773 K以上制备的样品的周期性结构被破坏。Si/Ge多层膜的热电功率比体SiGe材料的热电功率大，Si/GeB多层膜的热电功率随生长温度的升高而降低，这与硼激活增加载流子浓度有关。至于电阻率，由于Si/GeB多层膜的电阻率值低于Si/Ge多层膜的电阻率值，因此确定了硼掺杂效应。在Si/Ge和Si/GeB中，电阻率在673 K处具有最小值。由于多层结构保持在该温度下，电阻率的降低可以归因于具有较低带隙的层的载流子迁移率的增加。结果表明，在673 K时，Si/GeB多层膜的功率因数比Si/Ge多层膜的大。
Si/Ge and Si/GeB multilayer structured thin films were prepared by using the ion-beam sputtering (IBS) method with changing the growth temperatures from room temperature to 873 K. Then their thermoelectric properties were estimated and the effects of boron on Si/Ge superlattice structure were investigated. It was shown from XRD spectra that samples prepared below 673 K kept the periodic structure, however at exceeding 773 K the structure was broken. Si/Ge multilayer thin films showed larger thermoelectric power than that of bulk-SiGe materials and also Si/GeB multilayer showed decreases of thermoelectric power with increasing growth temperature, which is related to the increase of carrier concentration by boron activation. As for the resistivity, since the Si/GeB multilayers had lower values of the resistivity than that of Si/Ge multilayers, a boron doping effect was identified. In both Si/Ge and Si/GeB, the resistivity had a minimum at 673 K. Since the multilayer structure holds up to this temperature, the decrease in the resistivity can be attributed to the increase in the carrier mobility of the layer with a lower band gap. As a result, Si/GeB showed the larger power factor than that of Si/Ge multilayer at 673 K.
热退火重 B 掺杂 SiGe 薄膜上的异常大热电势
DOI：
--
发表时间：
2003
期刊：
Jpn.J.Appl.Phys. 41(8B)
影响因子：
--
作者：
T.Kawahara;S.M.Lee;Y.Okamoto;J.Morimoto;K.Sasaki;T.Hata
通讯作者：
T.Hata