Effects of Surface Electrochemical Pretreatment on the Photoelectrochemical Performance of Mo-Doped BiVO4
Effects of Surface Electrochemical Pretreatment on the Photoelectrochemical Performance of Mo-Doped BiVO4
复制标题
表面电化学预处理对Mo掺杂BiVO4光电化学性能的影响
DOI：
10.1021/jp210207q
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发表时间：
2012-03-01
影响因子：
3.7
通讯作者：
Zou, Zhigang
中科院分区：
文献类型：
--
作者：
Luo, Wenjun;Li, Zhaosheng;Zou, Zhigang
通过电化学循环伏安法（CV）在黑暗中进行表面预处理，发现Mo掺杂BiVO 4在正面光照下的光电流显著增强。通过扫描电子显微镜、X射线光电子能谱和Mott-Schottky方法研究了样品表面预处理前后的变化。结果表明，光电流的增强来自于去除表面复合中心，包括Mo 6+离子，和还原物种的再氧化。部分被还原的离子在空气中可被再氧化。然而，在光照下，来自Mo 6+溶解的光电流增强可以保持在高电位下。提出了一种可能的机制来解释光电流增强的原因。
The surface pretreatment by electrochemical cyclic voltammetry (CV) in the dark was found to remarkably enhance the photocurrent of Mo-doped BiVO4 from the front side illumination. The variation of the samples before and after the surface pretreatment was investigated by scanning electron microscopy, X-ray photoelectron spectroscopy, and Mott–Schottky methods. The results showed that the photocurrent enhancement came from both the removal of the surface recombination center, including Mo6+ ions, and reoxidation of the reduced species. The part of the reduced ions can be reoxidized in air. However, the photocurrent enhancement from the Mo6+ dissolution can be kept at high potential under illumination. A possible mechanism was also proposed to explain the reason for the photocurrent enhancement.