Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions
Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions
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DOI：
10.1103/physrevlett.94.127202
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发表时间：
2005-04-01
影响因子：
8.6
通讯作者：
Foxon, CT
中科院分区：
文献类型：
--
作者：
Giddings, AD;Khalid, MN;Foxon, CT
本文报道了（Ga，Mn）As横向纳米收缩中的大的隧穿各向异性磁电阻（TAMR）。与先前报道的纳米接触中的隧穿磁阻效应不同，TAMR不需要在收缩的任一侧上的非共线磁化。的效果的性质是建立一个直接比较其现象与正常的各向异性磁阻（AMR）在相同的横向几何测量。我们建立的TAMR和AMR之间的直接联系表明，TAMR可以在显示室温AMR的其他材料中观察到，并表明纳米收缩磁阻器件的物理特性比以前认为的要丰富得多。
We report a large tunneling anisotropic magnetoresistance (TAMR) in (Ga,Mn)As lateral nanoconstrictions. Unlike previously reported tunneling magnetoresistance effects in nanocontacts, the TAMR does not require noncollinear magnetization on either side of the constriction. The nature of the effect is established by a direct comparison of its phenomenology with that of normal anisotropic magnetoresistance (AMR) measured in the same lateral geometry. The direct link we establish between the TAMR and AMR indicates that TAMR may be observable in other materials showing room temperature AMR and demonstrates that the physics of nanoconstriction magnetoresistive devices can be much richer than previously thought.