Effect of interatomic distance of constituent nitrogen atoms on its localized electronic state in dilute GaAsN thin films investigated by a photoreflectance spectroscopy
Effect of interatomic distance of constituent nitrogen atoms on its localized electronic state in dilute GaAsN thin films investigated by a photoreflectance spectroscopy
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通过光反射光谱研究稀 GaAsN 薄膜中氮原子原子间距离对其局域电子态的影响
DOI：
10.1016/j.egypro.2014.12.343
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
T.
中科院分区：
文献类型：
--
作者：
Ding;W.;Fukuyama;A.;Morioka;G.;Suzuki;A.;Suzuki;H.;Yamaguchi;M.;Ikari;T.
为了研究氮诱导局域态（EN）对GaAs基质材料导带的微结构影响，我们采用光反射测量方法对化学束外延和流速调制化学束外延生长的GaAsN薄膜进行了研究。我们测量了两个分裂的子带来估计EN的正确值。可以清楚地看到，估计EN随着氮含量和温度的增加而降低。通过考虑相邻氮原子之间平均距离的变化，我们得出结论：ENs的微观结构不仅是孤立的氮原子，而且是氮相关的复合物，伴随着低级氮原子对和/或氮簇。
To investigate the microstructure of nitrogen-induced localized state (EN) that perturbs the conduction band of GaAs host material, we adopted the photoreflectance measurements to chemical-beam-epitaxy and flow-rate modulated chemical-beam-epitaxy grown GaAsN thin films. We measured both two split subbands to estimate correct values ofEN. It was clearly seen that estimatedENdecreased with increasing nitrogen content and temperature. By considering a change of a mean distance between adjacent nitrogen atoms, we concluded that the microscopic structure ofENis not only an isolated nitrogen atom but also nitrogen-related complex, accompanied by low-order pairs of nitrogen atoms and/or nitrogen clusters.