Photoetching of Silicon by N-Fluoropyridinium Salt
Photoetching of Silicon by N-Fluoropyridinium Salt
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DOI：
10.1149/1.3481770
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发表时间：
2010-11
影响因子：
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通讯作者：
K. Tsukamoto;J. Uchikoshi;Shigeharu Goto;T. Kawase;Noritaka Ajari;T. Nagai;K. Adachi;Kenta Arima;M. Morita
中科院分区：
文献类型：
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作者：
K. Tsukamoto;J. Uchikoshi;Shigeharu Goto;T. Kawase;Noritaka Ajari;T. Nagai;K. Adachi;Kenta Arima;M. Morita
本研究提出了一种使用β-氟吡啶鎓盐进行光刻的方法。通过将β-氟吡啶鎓盐施加到其表面并将该表面暴露于光来蚀刻Si。使用液体氟吡啶鎓盐的蚀刻表面比使用固体氟吡啶鎓盐时更光滑。蚀刻深度随着曝光时间的增加而增加。 H 封端的疏水性硅比 OH 封端的亲水性硅更容易蚀刻。是通过光刻法生产的。这表明β-氟吡啶鎓盐接收来自Si的激发电子并为Si提供活性F物质。
A photoetching method with -fluoropyridinium salts is proposed in this study. Si is etched by applying -fluoropyridinium salts to its surface and exposing the surface to light. The etched surface that uses liquid -fluoropyridinium salts is smoother than when solid -fluoropyridinium salts are used. The etching depth increases with exposure time. H-terminated hydrophobic Si is easier to etch than OH-terminated hydrophilic Si. is produced by photoetching. This suggests that -fluoropiridinium salts receive excited electrons from Si and supply Si with active F species.