Micro-photoluminescence characterization of local electronic states in a (110) GaAs quantum well fabricated by cleaved-edge overgrowth
Micro-photoluminescence characterization of local electronic states in a (110) GaAs quantum well fabricated by cleaved-edge overgrowth
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DOI：
10.1063/1.1804248
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发表时间：
2004-11
影响因子：
3.2
通讯作者：
Ji‐Won Oh;M. Yoshita;Y. Hayamizu;H. Akiyama;L. Pfeiffer;K. West
中科院分区：
文献类型：
--
作者：
Ji‐Won Oh;M. Yoshita;Y. Hayamizu;H. Akiyama;L. Pfeiffer;K. West
利用微光致发光（PL）成像和光谱学研究了高温生长中断退火解理边过生长方法制备的原子平面（110）GaAs界面上形成的特征性表面岛和坑所导致的局域电子态。通过对宽度为6.8 μm、长度为3 mm、厚度为6 nm的量子阱的整体观察，我们发现了由于分离的2或3层（ML）岛、分离的1-ML坑以及沿解理原子阶线形成的1-ML岛和坑而产生的局部PL信号，以及在整个样品范围内状态的逐渐变化。
Local electronic states due to characteristic surface islands and pits formed on an atomically flat (110) GaAs interface of a quantum well fabricated by a cleaved-edge-overgrowth method with high-temperature growth-interrupt annealing are characterized by micro-photoluminescence (PL) imaging and spectroscopy. With the overall observation of the 6-nm-thick (110) quantum well with the area of 6.8-μm width and 3-mm length, we found local PL signals due to isolated 2- or 3-monolayer (ML) islands, isolated 1-ML pits, and 1-ML islands and pits formed along the cleavage atomic-step lines, and gradual change of the states across the full range of the sample.