Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy
Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy
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通过等离子体辅助和反应分子束外延在 SiC(0001) 上生长高质量 (Al,Ga)N 和 (Ga,In)N 异质结构
DOI：
10.1116/1.1305288
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发表时间：
2000
影响因子：
1.4
通讯作者：
P. Waltereit
中科院分区：
文献类型：
--
作者：
K. Ploog;O. Brandt;R. Muralidharan;A. Thamm;P. Waltereit
我们讨论了使用 N2 等离子体放电或 NH3 裂解作为活性氮源，通过分子束外延 (MBE) 在 SiC(0001) 衬底上生长高质量 (Al,Ga)N/GaN 和 (Ga,In)N/GaN 异质结构所必需的策略。衬底制备、成核和生长条件的优化是改善表面形貌、界面突变、结构完整性和电子性能的重要问题。通过在 1600°C 的氢气中进行异位蚀刻，随后通过几个周期的 Ga 沉积和 800°C 的闪蒸进行原位清洁，在制备 SiC(0001) 表面方面取得了突破。到目前为止，对于等离子体辅助 (PA)MBE 和反应性 (R)MBE 来说，当直接开始生长时，即没有任何特定的成核阶段，可以获得最佳结果。使用 0.5–1.2 μm/h 的生长速率，发现 GaN 的最佳生长温度 Ts 为 700°C。任何与最佳 Ts 和最佳 III/V 通量比的偏差都可以通过反射轻松检测到...
We discuss the strategies essential for the growth of high-quality (Al,Ga)N/GaN and (Ga,In)N/GaN heterostructures on SiC(0001) substrates by molecular beam epitaxy (MBE) using either N2 plasma discharge or NH3 cracking as an active nitrogen source. Optimization of substrate preparation, nucleation, and growth conditions are the important issues to improve the surface morphology, interface abruptness, structural integrity, and electronic properties. A breakthrough in preparing the SiC(0001) surface was achieved by ex situ etching in H2 at 1600 °C and subsequent in situ cleaning via several cycles of Ga deposition and flash-off at 800 °C. By far the best results are then obtained, when growth is initiated directly, i.e., without any specific nucleation phase, for both plasma assisted (PA)MBE and reactive (R)MBE. Using growth rates of 0.5–1.2 μm/h the optimum growth temperature Ts was found to be 700 °C for GaN. Any deviation from the optimum Ts and the optimum III/V flux ratio can be easily detected by refl...