Design and fabrication of two kind of SOI-based EA-type VOAs
Design and fabrication of two kind of SOI-based EA-type VOAs
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DOI：
10.1016/j.optlastec.2017.12.041
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发表时间：
2018-06
影响因子：
5
通讯作者：
Pei Yuan;Yue Wang;Yuan-da Wu;Jun-ming An;Xiongwei Hu
中科院分区：
文献类型：
--
作者：
Pei Yuan;Yue Wang;Yuan-da Wu;Jun-ming An;Xiongwei Hu
本文研究了基于电吸收机理的SOI基可变光衰减器。采用两种不同的掺杂结构实现衰减：单个横向p-i-n二极管结构和多个横向p-i-n二极管串联结构。实验结果表明，横向p-i-n二极管串联结构的VOA（串联VOA）比单横向p-i-n二极管结构的VOA（单VOA）具有更高的衰减效率，其衰减效率分别为3.76 dB/mA和0.189 dB/mA。在20 dB衰减时，对应的功耗分别为202 mW（串联VOA）和424 mW（单VOA）。上升时间为34.5 ns（单VOA）和45.5 ns（串联VOA），下降时间为37 ns（单VOA）和48.5 ns（串联VOA）。
SOI-based variable optical attenuators based on electro-absorption mechanism are demonstrated in this paper. Two different doping structures are adopted to realize the attenuation: a structure with a single lateral p-i-n diode and a structure with several lateral p-i-n diodes connected in series. The VOAs with lateral p-i-n diodes connected in series (series VOA) can greatly improve the device attenuation efficiency compared to VOAs with a single lateral p-i-n diode structure (single VOA), which is verified by the experimental results that the attenuation efficiency of the series VOA and the single VOA is 3.76 dB/mA and 0.189 dB/mA respectively. The corresponding power consumption at 20 dB attenuation is 202 mW (series VOA) and 424 mW (single VOA) respectively. The raise time is 34.5 ns (single VOA) and 45.5 ns (series VOA), and the fall time is 37 ns (single VOA) and 48.5 ns (series VOA).