Nitrogen-Doped Graphene Nanoplatelets from Simple Solution Edge-Functionalization for n-Type Field-Effect Transistors
Nitrogen-Doped Graphene Nanoplatelets from Simple Solution Edge-Functionalization for n-Type Field-Effect Transistors
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DOI：
10.1021/ja402555n
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发表时间：
2013-06-19
影响因子：
15
通讯作者：
Baek, Jong-Beom
中科院分区：
文献类型：
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作者：
Chang, Dong Wook;Lee, Eun Kwang;Baek, Jong-Beom
发展一种通用的石墨结构的氮掺杂方法是许多应用的重要挑战，如能量转换、存储和电子器件。在这里，我们报道了一种通过湿化学反应制备氮掺杂石墨烯纳米片的简单而有效的方法。氧化石墨烯(GO)中的单酮(C=O)与含有单胺的化合物反应生成亚胺(希夫碱)功能化GO(IGO)。GO中的α-二酮与含1，2-二胺(邻二胺)的化合物反应，得到稳定的吡嗪环功能化GO(PGO)。随后对iGO和PGO进行热处理，得到高质量的氮掺杂石墨烯纳米片，分别命名为HIGO和hpGO。特别值得注意的是，hpGO表现出n型场效应晶体管行为，电荷中性点(狄拉克点)位于16V左右。此外，hpGO的空穴迁移率和电子迁移率分别高达11.5和12.4 cm(2)V(-1)S(-1)。
The development of a versatile method for nitrogen-doping of graphitic structure is an important challenge for many applications, such as energy conversions and storages and electronic devices. Here, we report a simple but efficient method for preparing nitrogen-doped graphene nanoplatelets via wet-chemical reactions. The reaction between monoketone (C=O) in graphene oxide (GO) and monoamine-containing compound produces imine (Shiff base) functionalized GO (iGO). The reaction between alpha-diketone in GO and 1,2-diamine (ortho-diamine)-containing compound gives stable pyrazine ring functionalized GO (pGO). Subsequent heat-treatments of iGO and pGO result in high-quality, nitrogen-doped graphene nanoplatelets to be designated as hiGO and hpGO, respectively. Of particular interest, hpGO was found to display the n-type field-effect transistor behavior with a charge neutral point (Dirac point) located at around 16 V. Furthermore, hpGO showed hole and electron mobilities as high as 11.5 and 12.4 cm(2)V(-1)s(-1), respectively.