Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials
Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials
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DOI：
10.1063/1.1305510
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发表时间：
2000-08-01
影响因子：
1.6
通讯作者：
Yasutake, K
中科院分区：
文献类型：
--
作者：
Mori, Y;Yoshii, K;Yasutake, K
常压等离子体化学气相沉积(CVD)系统能够以很高的沉积速率制备功能薄膜。产生高密度自由基的大气压等离子体已被有效地用于沉积薄膜。新设计的旋转电极和150 MHz甚高频电源相结合，不仅可以产生高密度的大气压等离子体，而且可以避免离子轰击薄膜。凭借该系统的这些高贵特性，可以以前所未有的高沉积速率制备高质量的薄膜。为了验证常压等离子体CVD系统的有效性，在含有He、H-2和SiH4的混合气体中制备了氢化非晶硅(a-Si：H)薄膜。结果表明，当衬底温度为200℃时，可以获得均匀的a-Si：H薄膜，其沉积速度比传统的低压等离子体CVD技术快100多倍。(C)2000年美国物理研究所。[S0034-6748(00)03108-7]。
The atmospheric pressure plasma chemical vapor deposition (CVD) system has been developed to fabricate functional thin films at very high deposition rate. The atmospheric pressure plasma, in which high-density radicals are created, has been effectively used to deposit thin films. Combination of the newly designed rotary electrode and the 150 MHz very high frequency power supply makes it possible not only to generate the high-density atmospheric pressure plasma but also to avoid ion bombardment against the film. By virtue of these noble characteristics of the system, high quality films can be fabricated at an unprecedented high deposition rate. In order to demonstrate the effectiveness of the atmospheric pressure plasma CVD system, hydrogenated amorphous silicon (a-Si:H) films were prepared in gas mixtures containing He, H-2, and SiH4. The results showed that homogeneous a-Si:H films grew when substrates were heated at 200 degrees C. Extremely high deposition rate, which was more than 100 times faster than that of the conventional low-pressure plasma CVD technique, was realized. (C) 2000 American Institute of Physics. [S0034-6748(00)03108-7].