CONTROL OF GAAS SCHOTTKY-BARRIER HEIGHT BY ULTRATHIN MOLECULAR-BEAM EPITAXY SI INTERFACE CONTROL LAYER
CONTROL OF GAAS SCHOTTKY-BARRIER HEIGHT BY ULTRATHIN MOLECULAR-BEAM EPITAXY SI INTERFACE CONTROL LAYER
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DOI：
10.1143/jjap.32.502
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发表时间：
1993-01-01
期刊：
影响因子：
--
通讯作者：
HASEGAWA, H
中科院分区：
文献类型：
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作者：
KOYANAGI, K;KASAI, S;HASEGAWA, H
通过在Al/GaAs（100）肖特基势垒二极管中插入超薄分子束外延（MBE） Si界面控制层（Si ICL）来控制肖特基势垒高度（SBH）。在无序诱导间隙态（DIGS）模型的基础上，提出了一种包括理想情况和松弛情况的SBH控制理论。利用x射线光电子能谱（XPS）、电流-电压（I-V）和电容-电压（C-V）技术测量肖特基势垒高度（SBH）。理论和实验表明，在适当的砷掺杂下，假晶硅ICL可以在约400 meV的宽范围内精确地改变SBH。当Si ICL超过10 A的临界厚度时，由于Si ICL- gaas界面上的电离掺杂原子和电离界面态之间的竞争，SBH控制变得更加困难。
An attempt is made to control the Schottky barrier height (SBH) of Al/GaAs(100) Schottky barrier diodes by inserting an ultrathin Molecular beam epitaxy (MBE) Si interface control layer (Si ICL). A theory for SBH control including an ideal case and a relaxed case is presented based on the disorder-induced gap state (DIGS) model. The Schottky barrier height (SBH) is measured by the X-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) techniques. Theory and experiment show that the SBH can be varied precisely over a wide range of about 400 meV by the use of pseudomorphic Si ICL with suitable As doping. When the Si ICL is above the critical thickness of 10 A, SBH control becomes more difficult due to competition between the ionized dopant atoms and the ionized interface states at the Si ICL-GaAs interface.