Continuous-flow mass production of silicon nanowires via substrate-enhanced metal-catalyzed electroless etching of silicon with dissolved oxygen as an oxidant.

Continuous-flow mass production of silicon nanowires via substrate-enhanced metal-catalyzed electroless etching of silicon with dissolved oxygen as an oxidant.
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以溶解氧作为氧化剂,通过基底增强金属催化硅无电蚀刻连续流大规模生产硅纳米线

DOI:
10.1038/srep03667
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发表时间:
2014-01-13
期刊:
影响因子:
4.6
通讯作者:
Lee ST
Lee ST
中科院分区:
综合性期刊3区
文献类型:
--
作者:
Hu Y;Peng KQ;Liu L;Qiao Z;Huang X;Wu XL;Meng XM;Lee ST

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硅纳米线(SiNW)因其独特的性质及其在光伏器件、热电器件、锂离子电池和生物技术等领域的应用前景而受到越来越多的关注。低成本大规模生产SiNW是基于SiNWs的纳米技术商业化的关键。然而,经济的、受控的大规模生产硅核子武器仍然具有挑战性,而且很难实现。在这里,我们展示了一种简单的策略,能够在工业规模上低成本、连续流动地大规模生产SiNW。该策略依赖于使用氢氟酸(HF)水溶液中的溶解氧作为氧化剂的衬底增强型金属催化化学刻蚀(MCEE)硅。这种新颖的MCEE方法具有简单性、可扩展性和灵活性等显著优点,是传统MCEE方法的一种有吸引力的替代方法。
Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods.
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影响因子: 56.9
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