High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation
High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation
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DOI：
10.1109/vlsit.2012.6242511
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发表时间：
2012-06
期刊：
影响因子：
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通讯作者：
R. Zhang;P. Huang;N. Taoka;M. Takenaka;S. Takagi
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文献类型：
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作者：
R. Zhang;P. Huang;N. Taoka;M. Takenaka;S. Takagi
HfO2/Al2O3/GeOx/Ge 栅极堆叠是通过对 HfO2/Al2O3/Ge 结构应用等离子体后氧化来制造的。这些 Ge 栅极堆叠可同时实现约 0.7 nm 的超薄 EOT 和 1011 cm-2eV-1 量级的低 Dit。迄今为止报道的 Ge pMOSFET 中，具有这些栅极堆叠的 (100) Ge pMOSFET 的卓越性能已得到证明，在约 0.8 nm EOT 下具有 596 cm2/Vs 的创纪录高空穴迁移率。
HfO2/Al2O3/GeOx/Ge gate stacks were fabricated by applying the plasma post oxidation to HfO2/Al2O3/Ge structures. These Ge gate stack are shown to simultaneously realize both ultrathin EOT of ~0.7 nm and low Dit of 1011 cm-2eV-1 order. The superior operation of (100) Ge pMOSFETs with these gate stacks has been demonstrated with record high hole mobility of 596 cm2/Vs under ~0.8 nm EOT among the Ge pMOSFETs reported so far.