Surface Modification of Black Phosphorus with Group 13 Lewis Acids for Ambient Protection and Electronic Tuning
Surface Modification of Black Phosphorus with Group 13 Lewis Acids for Ambient Protection and Electronic Tuning
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DOI：
10.1002/anie.202100308
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发表时间：
2021-03-05
影响因子：
16.6
通讯作者：
Velian, Alexandra
中科院分区：
文献类型：
--
作者：
Tofan, Daniel;Sakazaki, Yukako;Velian, Alexandra
在这里，我们介绍了一个简单的，溶液相的协议，修改刘易斯基本表面的几层黑磷（bP），并证明其有效性，在提供环境稳定性和调整的电子性质。评价了亲电性、空间体积和皮尔逊硬/软度范围内的市售第13族刘易斯酸。刘易斯酸和bP晶格之间的相互作用的性质进行了研究，使用一系列的微观（光学，原子力，扫描电子）和光谱（能量色散，X射线光电子）的方法。Al和Ga卤化物在防止bP的环境降解（对于AlBr 3>84 h）方面是最有效的，并且所得场效应晶体管显示出优异的IV特性、光电流和电流稳定性，并且是显著p掺杂的。该协议，化学匹配的bP和兼容的设备制造，开辟了一条路径，确定性和持久性的调整bP的电子特性。
Herein we introduce a facile, solution-phase protocol to modify the Lewis basic surface of few-layer black phosphorus (bP) and demonstrate its effectiveness at providing ambient stability and tuning of electronic properties. Commercially available group 13 Lewis acids that range in electrophilicity, steric bulk, and Pearson hard/soft-ness are evaluated. The nature of the interaction between the Lewis acids and the bP lattice is investigated using a range of microscopic (optical, atomic force, scanning electron) and spectroscopic (energy dispersive, X-ray photoelectron) methods. Al and Ga halides are most effective at preventing ambient degradation of bP (>84 h for AlBr3), and the resulting field-effect transistors show excellent IV characteristics, photocurrent, and current stability, and are significantly p-doped. This protocol, chemically matched to bP and compatible with device fabrication, opens a path for deterministic and persistent tuning of the electronic properties in bP.