Total ionizing dose effects on the SOI pixel sensor for X-ray astronomical use
Total ionizing dose effects on the SOI pixel sensor for X-ray astronomical use
复制标题
总电离剂量对 X 射线天文用途 SOI 像素传感器的影响
DOI:
10.1016/j.nima.2018.07.057
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发表时间:
2018
期刊:
影响因子:
--
通讯作者:
Shinya N
中科院分区:
文献类型:
--
作者:
Koji Mori;Yusuke Nishioka;Ayaki Takeda;Nobuaki Takebayashi;Ryota Takenaka;Seina Sakakura;Shoma Yokoyama;Kohei Fukuda;Masataka Yukumoto;Takahiro Hida;Takeshi G. Tsuru;Takaaki Tanaka;Hideaki Matsumura;Hideki Hayashi;Takayoshi Kohmura;Shinya N
We report on total ionizing dose effects on the X-ray SOI pixel sensor, XRPIX. XRPIX has been developed as an imaging spectrometer for X-ray astronomical use in space. Front-and back-illuminated (FI and BI) devices were irradiated with hard X-rays from an X-ray tube operated at 30 kV with a Molybdenum target. We found that the degradation rate of the readout noise of the BI device was approximately three times slower than that of the FI device as a function of radiation exposure. Those of both type of devices, however, were virtually identical when the readout noise was evaluated as a function of the absorbed dose at the buried oxide layer, D BOX. The pedestal and analog-to-digital conversion gain also displayed similar tendencies. These results demonstrate that BI type devices have a higher radiation tolerance as a focal plane sensor of an X-ray mirror and the radiation tolerance of XRPIX devices is governed by D BOX. The readout noise was stable up to about 1 krad in D BOX, increased by about 10% at 10 krad in D BOX, and continued to increase under further irradiation. If we employ an X-ray mirror with a half-power diameter of 10 arcsec and a focal length of 10 m, 10 krad in D BOX, a reasonable threshold of radiation tolerance in this experiment, is equivalent to more than three years in orbit, typically required of space-borne sensors.