Suppression of electron spin relaxation in Mn-doped GaAs.
Suppression of electron spin relaxation in Mn-doped GaAs.
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DOI：
10.1103/physrevlett.101.076602
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发表时间：
2007-10
影响因子：
8.6
通讯作者：
G. Astakhov;R. I. Dzhioev;K. Kavokin;V. L. Korenev;M. V. Lazarev;M. N. Tkachuk;Y. Kusrayev;T. Kießling;W. Ossau;L. Molenkamp
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文献类型：
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作者：
G. Astakhov;R. I. Dzhioev;K. Kavokin;V. L. Korenev;M. V. Lazarev;M. N. Tkachuk;Y. Kusrayev;T. Kießling;W. Ossau;L. Molenkamp
我们报告了一个令人惊讶的长自旋弛豫时间的电子在Mn掺杂的p-GaAs。自旋弛豫时间与光泵浦成比例，并且从黑暗中的12 ns增加到饱和时的160 ns。这种行为与电子的自旋弛豫速率的差异在电离或中性Mn受体的波动领域，分别旋进。对于后者，Mn离子和束缚空穴之间的反铁磁交换相互作用导致这些波动场的部分补偿，从而导致增强的自旋记忆。
We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.