Schottky barriers and Coulomb blockade in self-assembled carbon nanotube FETs
Schottky barriers and Coulomb blockade in self-assembled carbon nanotube FETs
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DOI：
10.1021/nl0342848
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发表时间：
2003-08-01
期刊：
影响因子：
10.8
通讯作者：
Bonnot, AM
中科院分区：
文献类型：
--
作者：
Marty, L;Bouchiat, V;Bonnot, AM
我们报道了低温下批量加工的单壁碳纳米管（SWNT）场效应晶体管（FET）中的电子输运。单壁碳纳米管是在原位合成和布线之间的亚微米金属电极在一个单步过程中，涉及热灯丝辅助化学气相沉积。FET在1 ~ 300 K之间表现出明显的双极场效应。此外，由于电荷的提取和捕获，栅极依赖性在任何温度下都表现出滞后。我们发现肖特基势垒在单壁碳纳米管/金属接触负责的场效应。低于30 K，沿沿着的单壁碳纳米管的势垒诱导库仑阻塞在低漏极-源极偏压，导致抑制的场效应增益和诱导的波动在介电常数。
We report low-temperature electronic transport in batch-processed single-walled carbon nanotube (SWNT) field-effect transistors (FETs). SWNTs are in situ synthesized and wired between submicrometer metallic electrodes in a single-step process involving hot-filament-assisted chemical vapor deposition. FETs show a pronounced ambipolar field effect between 1 and 300 K. Moreover, the gate dependence exhibits hysteresis at any temperature because of the extraction and trapping of charges. We find Schottky barriers at the SWNT/metal contact to be responsible for the field effect. Below 30 K, potential barriers along the SWNT induce a Coulomb blockade at low drain-source bias, leading to the suppression of the field-effect gain and inducing fluctuations in the transconductance.