Kinetic analysis of the growth behavior of perovskite CsPbBr 3 nanocrystals in a microfluidic system

Kinetic analysis of the growth behavior of perovskite CsPbBr 3 nanocrystals in a microfluidic system
复制标题

微流体系统中钙钛矿CsPbBr 3 纳米晶体生长行为的动力学分析

DOI:
10.1039/d2lc00331g
复制
发表时间:
2022
期刊:
影响因子:
6.1
通讯作者:
Yang, Fuqian
Yang, Fuqian
中科院分区:
工程技术1区
文献类型:
--
作者:
Tang, Xiaobing;Yang, Fuqian

文献摘要

相似文献

了解纳米颗粒和半导体纳米晶体在动态环境下的生长行为对于控制所制备的纳米颗粒和半导体纳米晶体的尺寸和均匀性具有重要意义。在这项工作中,我们在没有库仑相互作用的情况下,在量子限制效应的框架下,建立了半导体纳米晶体的带隙(光致发光峰值波长)与微流体系统中半导体纳米晶体合成的总流速之间的关系。利用这一关系,我们分析了在 303 至 363 K 温度范围内,通过反溶剂法在微流体系统中合成的 CsPbBr3 纳米晶体的生长行为。结果表明,CsPbBr3 纳米晶体的平均尺寸的平方与总流量成反比,并支持了所建立的关系。控制微流体系统中 CsPbBr3 纳米晶体生长的速率过程的活化能为 2.05 kJ mol−1。提高合成温度可拓宽微流体系统中制备的 CsPbBr3 NC 的尺寸分布。这项工作中开发的方法提供了一种利用光致发光特性原位监测和分析动态环境下半导体纳米晶体生长的简单方法。
Understanding the growth behavior of nanoparticles and semiconductor nanocrystals under dynamic environments is of profound importance in controlling the sizes and uniformity of the prepared nanoparticles and semiconductor nanocrystals. In this work, we develop a relation between the bandgap (the photoluminescence peak wavelength) of semiconductor nanocrystals and the total flow rate for the synthesis of semiconductor nanocrystals in microfluidic systems under the framework of the quantum confinement effect without the contribution of Coulomb interaction. Using this relation, we analyze the growth behavior of CsPbBr3 nanocrystals synthesized in a microfluidic system by an antisolvent method in the temperature range of 303 to 363 K. The results demonstrate that the square of the average size of the CsPbBr3 nanocrystals is inversely proportional to the total flow rate and support the developed relation. The activation energy for the rate process controlling the growth of the CsPbBr3 nanocrystals in the microfluidic system is 2.05 kJ mol−1. Increasing the synthesis temperature widens the size distribution of the CsPbBr3 NCs prepared in the microfluidic system. The method developed in this work provides a simple approach to use photoluminescent characteristics to in situ monitor and analyze the growth of semiconductor nanocrystals under dynamic environments.