Performance and Uniformity Improvement in Ultrathin Cu(In,Ga)Se2 Solar Cells with a WO x Nanointerlayer at the Absorber/Transparent Back-Contact Interface.
Performance and Uniformity Improvement in Ultrathin Cu(In,Ga)Se2 Solar Cells with a WO x Nanointerlayer at the Absorber/Transparent Back-Contact Interface.
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DOI：
10.1021/acsami.8b15930
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发表时间：
2018-12
影响因子：
9.5
通讯作者：
Muhammad Saifullah;S. Rasool;SeJin Ahn;Kihwan Kim;J. Cho;J. Yoo;W. Shin;J. Yun;Joo Hyung Park
中科院分区：
文献类型：
--
作者：
Muhammad Saifullah;S. Rasool;SeJin Ahn;Kihwan Kim;J. Cho;J. Yoo;W. Shin;J. Yun;Joo Hyung Park
将CIGSe吸收层减薄至500nm以下是降低单位瓦光伏发电成本的理想选择，并且，基于这种薄吸收层的半透明太阳能电池可以用于双面和叠层结构，如果背电极是透明的。在本研究中，在Cu(In,Ga)Se2 （CIGSe）吸收体和锡掺杂氧化铟背触点之间插入WO x层，以增强背电极的空穴收集。发现厚度为6 nm的WO x夹层是最佳的，因为与没有WO x夹层的参考器件相比，它使厚度为~ 450 nm的基于cigse的器件的填充因子相对增加了~ 38%。在固定CIGSe厚度的同时，将WO x间层厚度增加到≥6 nm，导致太阳能电池参数下降，主要原因是在CIGSe/WO x交界处出现了GaO x界面层。
Thinning CIGSe absorber layer to less than 500 nm is desirable for reducing the cost per unit watt of photovoltaic-generated electricity, and also, the semitransparent solar cell based on such a thin absorber can be used in bifacial and superstrate configurations if the back electrode is transparent. In this study, a WO x layer is inserted between Cu(In,Ga)Se2 (CIGSe) absorber and tin-doped indium oxide back-contact to enhance the hole collection at the back electrode. A WO x interlayer with a thickness of 6 nm is found to be optimum because it causes a ∼38% relative increase in the fill factor of a ∼450 nm thick CIGSe-based device compared to the reference device without a WO x interlayer. While fixing the thickness of CIGSe, increasing the WO x interlayer thickness to ≥6 nm results in decreases of solar cell parameters primarily because of the emergence of a GaO x interfacial layer at the CIGSe/WO x junction.