Metal−Molecule Interfaces Formed by Noble-Metal−Chalcogen Bonds for Nanoscale Molecular Devices
Metal−Molecule Interfaces Formed by Noble-Metal−Chalcogen Bonds for Nanoscale Molecular Devices
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DOI：
10.1021/jp9109139
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发表时间：
2010-02
影响因子：
3.7
通讯作者：
Kazumichi Yokota;M. Taniguchi;T. Kawai
中科院分区：
文献类型：
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作者：
Kazumichi Yokota;M. Taniguchi;T. Kawai
利用苯乙撑和苯硒酚在Ag（111）和Cu（111）衬底上的单分子膜，系统地研究了贵金属-硫族元素键形成的金属-分子界面的电子态。X射线光电子能谱和紫外光电子能谱显示，Ag−S、Ag−Se和Cu−S界面保持其金属性质，而Cu−Se界面被氧化。基于本研究的结果和我们以前的研究，我们得出结论，在Au−S，Au−Se，Au−Te，Ag−S，Ag−Se，Cu−S和Cu−Se界面中，Au−Se是最适合用于纳米分子器件的界面。我们发现金属-分子界面系统的屏蔽参数为0.5，表明在贵金属和分子之间的界面处产生费米能级附近的界面电子态。然而，我们预期来自费米能级附近的分子的态密度非常小。研究结果表明，金属-单分子-Meta的导电机制。
Using benzenethiol and benzeneselenol monolayers on Ag(111) and Cu(111) substrates, we systematically studied the electronic states of metal−molecule interfaces formed by noble-metal−chalcogen bonds. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy revealed that the Ag−S, Ag−Se, and Cu−S interfaces retain their metallic nature, whereas the Cu−Se interface gets oxidized. On the basis of the results of this study and our previous study, we conclude that, among Au−S, Au−Se, Au−Te, Ag−S, Ag−Se, Cu−S, and Cu−Se interfaces, Au−Se is most suitable for nanoscale molecular devices. We found a screening parameter of 0.5 in the metal−molecule interface system, indicating that interfacial electronic states near the Fermi level are produced at the interface between the noble metal and molecule. However, we expect the density of states that originates from molecules near the Fermi level to be very small. The findings imply that the electrical conduction mechanism of metal−single-molecule−meta...