Photonic crystal cavities from hexagonal boron nitride.
Photonic crystal cavities from hexagonal boron nitride.
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DOI：
10.1038/s41467-018-05117-4
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发表时间：
2018-07-05
影响因子：
16.6
通讯作者：
Aharonovich I
中科院分区：
文献类型：
--
作者：
Kim S;Fröch JE;Christian J;Straw M;Bishop J;Totonjian D;Watanabe K;Taniguchi T;Toth M;Aharonovich I
可扩展量子光子技术的发展需要光子器件的片上集成。最近，六方氮化硼（hBN）已成为一个有前途的平台，双曲声子极化激元和光学稳定，超亮量子发射器的报告。然而，在可扩展的片上纳米光子电路和腔量子电动力学（QED）实验中利用hBN需要用于制造高质量光学谐振器的稳健技术。在这封信中，我们设计和工程师从hBN悬浮光子晶体腔，并证明质量（Q）因素超过2000。随后，我们表明确定性，迭代调谐的直接写入EBIE的Q因子没有显着退化的个别腔。由hBN制成的可调谐腔的演示是基于货车德瓦耳斯材料的纳米光子学的前所未有的进步。我们的研究结果和hBN处理方法为固态系统开辟了有前途的途径，可应用于集成量子光子学，极化激元学和腔QED实验。六方氮化硼（hBN）是一种层状货车德瓦尔斯材料，显示出纳米光子学的前景。在这里，作者设计的hBN光子晶体腔的质量因子超过2000，并进一步证明了确定性的调整个别腔的微创电子束诱导蚀刻。
Development of scalable quantum photonic technologies requires on-chip integration of photonic components. Recently, hexagonal boron nitride (hBN) has emerged as a promising platform, following reports of hyperbolic phonon-polaritons and optically stable, ultra-bright quantum emitters. However, exploitation of hBN in scalable, on-chip nanophotonic circuits and cavity quantum electrodynamics (QED) experiments requires robust techniques for the fabrication of high-quality optical resonators. In this letter, we design and engineer suspended photonic crystal cavities from hBN and demonstrate quality (Q) factors in excess of 2000. Subsequently, we show deterministic, iterative tuning of individual cavities by direct-write EBIE without significant degradation of the Q-factor. The demonstration of tunable cavities made from hBN is an unprecedented advance in nanophotonics based on van der Waals materials. Our results and hBN processing methods open up promising avenues for solid-state systems with applications in integrated quantum photonics, polaritonics and cavity QED experiments. Hexagonal boron nitride (hBN) is a layered van der Waals material showing promise for nanophotonics. Here, the authors design hBN photonic crystal cavities with quality factors exceeding 2000, and further demonstrate deterministic tuning of individual cavities by minimally-invasive electron beam induced etching.
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影响因子：
35
作者：
Mauranyapin, N. P.;Madsen, L. S.;Bowen, W. P.
通讯作者：
Bowen, W. P.
片上单光子过滤和混合量子光子电路中的多路复用。
影响因子：
16.6
作者：
Elshaari AW;Zadeh IE;Fognini A;Reimer ME;Dalacu D;Poole PJ;Zwiller V;Jöns KD
通讯作者：
Jöns KD
影响因子：
16.6
作者：
Caldwell, Joshua D.;Kretinin, Andrey V.;Novoselov, Kostya S.
通讯作者：
Novoselov, Kostya S.
影响因子：
35
作者：
Kim, Hyochul;Bose, Ranojoy;Waks, Edo
通讯作者：
Waks, Edo
影响因子：
10.8
作者：
Chejanovsky, Nathan;Rezai, Mohammad;Wrachtrup, Joerg
通讯作者：
Wrachtrup, Joerg