MOCVD of WSe2 crystals on highly crystalline single- and multi-layer CVD graphene
MOCVD of WSe2 crystals on highly crystalline single- and multi-layer CVD graphene
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高结晶单层和多层 CVD 石墨烯上 WSe2 晶体的 MOCVD
DOI：
10.1016/j.carbon.2022.10.037
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发表时间：
2023
期刊：
影响因子：
10.9
通讯作者：
Redwing, Joan M.
中科院分区：
文献类型：
--
作者：
Huet, Benjamin;Bachu, Saiphaneendra;Alem, Nasim;Snyder, David W.;Redwing, Joan M.
范德华垂直异质结构（vdWHs）的可扩展合成被视为制造新型二维功能应用的重要里程碑。将半金属石墨烯与半导体过渡金属二硫族化合物（TMDs）相结合，在探索具有独特功能的新器件架构方面显示出巨大的潜力。在这项工作中，我们研究了高结晶CVD石墨烯上硒化钨（WSe2）的气源金属有机化学气相沉积（MOCVD）。单层和多层石墨烯由于其原子光滑的表面、没有悬空键、化学惰性和六边形晶格对称性，为研究wse2的基本生长机制提供了有趣的测试平台。我们的实验结果显示了石墨烯模板性质如何影响wse2成核位密度、生长速率、面内取向和厚度。特别是，我们发现wse2的生长行为强烈依赖于石墨烯层的数量，它们的堆叠顺序/扭曲角度，以及下面衬底的性质。
The scalable synthesis of van der Waals vertical heterostructures (vdWHs) is viewed as an important milestone for the fabrication of novel 2D-based functional applications. Combining semi-metallic graphene with semiconducting transition metal dichalcogenides (TMDs) shows great potential to explore new device architectures with unique functionalities. In this work, we investigate the gas-source metal–organic chemical vapor deposition (MOCVD) of tungsten selenide (WSe2) on highly crystalline CVD graphene. Single- and multi-layer graphene constitute interesting testing grounds for investigating fundamental WSe2growth mechanisms owing to its atomically smooth surface, absence of dangling bonds, chemical inertness, and hexagonal lattice symmetry. Our experimental results show how the graphene template properties influence the WSe2nucleation site density, growth rate, in-plane orientation, and thickness. In particular, we found that WSe2growth behavior strongly depends on the number of graphene layers, their stacking order/twisting angle, as well as on the nature of the substrate underneath.