Photocarrier localization and recombination dynamics in Cu2ZnSnS4 single crystals
Photocarrier localization and recombination dynamics in Cu2ZnSnS4 single crystals
复制标题
DOI：
10.1063/1.4829063
复制
发表时间：
2013-11-04
影响因子：
4
通讯作者：
Kanemitsu, Yoshihiko
中科院分区：
文献类型：
--
作者：
Le Quang Phuong;Okano, Makoto;Kanemitsu, Yoshihiko
研究了Cu2ZnSnS4单晶在室温下的光载流子定位和复合动力学。通过光致发光（PL）、PL激发、光电流和飞秒瞬态反射光谱的组合来评估带隙能量和带边缘以下的尾态。在典型的几皮秒到几十皮秒的时间常数内，光载流子迅速定位到浅尾态。亚纳秒级PL衰减动力学表明了在浅尾态中多载流子捕获过程的重要性。因此，Cu2ZnSnS4单晶的光学响应主要由尾态决定。(c) 2013 AIP出版有限责任公司
We have studied the photocarrier localization and recombination dynamics in Cu2ZnSnS4 single crystals at room temperature. The band-gap energy and tail states below the band edge were evaluated by a combination of photoluminescence (PL), PL excitation, photocurrent, and femtosecond transient reflectivity spectroscopy. The photocarriers are rapidly localized to shallow tail states within a typical time constant of several picoseconds to a few tens of picoseconds. The sub-nanosecond PL decay dynamics indicate the importance of multiple carrier trapping processes in the shallow tail states. Therefore, it is concluded that the tail states dominate the optical responses of Cu2ZnSnS4 single crystals. (c) 2013 AIP Publishing LLC.