Scaling Relations for Electron-Hole-Droplet Condensation in Semiconductors
Scaling Relations for Electron-Hole-Droplet Condensation in Semiconductors
复制标题
半导体中电子-空穴-液滴凝聚的标度关系
DOI：
10.1103/physrevlett.43.1054
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发表时间：
1979
影响因子：
8.6
通讯作者：
S. Ying
中科院分区：
文献类型：
--
作者：
T. Reinecke;S. Ying
指出先前提出的电子空穴液滴临界性质与基态性质之间的标度关系缺乏理论依据；通过对带结构变化很大的模型系统的详细计算，表明这些关系并不满足。提出了新的标度关系，并将其存在追溯到电子-空穴体系的能带结构和交换相关能的系统趋势。
It is pointed out that scaling relations suggested previously between the critical and ground-state properties of electron-hole droplets lack theoretical justification; by detailed calculations for model systems with widely varying band structure, these relations are shown not to be satisfied. New scaling relations are proposed, and their existence is traced to systematic trends in the band structure and the exchange-correlation energy of the electron-hole system.