Photorefractive damage resistance in Ti:PPLN waveguides with ridge geometry

Photorefractive damage resistance in Ti:PPLN waveguides with ridge geometry
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DOI:
10.1007/s00340-015-6191-0
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发表时间:
2015-08
期刊:
Applied Physics B
影响因子:
--
通讯作者:
S. Pal;B. K. Das;W. Sohler
S. Pal;B. K. Das;W. Sohler
中科院分区:
其他
文献类型:
--
作者:
S. Pal;B. K. Das;W. Sohler

文献摘要

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对 Ti:PPLN 脊形波导与传统 Ti:PPLN 通道波导的光折变灵敏度进行了理论分析。特别是,Ti:PPLN 脊和通道波导中强度相关的光折射、有效折射率、波导模式和功率相关的 SHG 均针对各种参数进行了建模。结果表明,与传统的扩散通道相比,具有脊形几何结构的 Ti:PPLN 波导具有更好的抗损伤能力。脊形波导的这种优越性归因于其更高的有效折射率对比度和更严格限制的导模。室温下二次谐波产生 (SHG) 和相位匹配波长的光致失谐特性的实验结果支持了理论预测。
A theoretical analysis of the photorefractive sensitivity of Ti:PPLN ridge waveguides in comparison with conventional Ti:PPLN channel waveguides is presented. In particular, intensity-dependent photorefraction, effective indices, waveguide modes and power-dependent SHG in Ti:PPLN ridge and channel waveguides are modeled for a wide range of parameters. Results predict a much better damage resistance of Ti:PPLN waveguides with ridge geometry in comparison with conventional indiffused channels. This superiority of ridge waveguides is attributed to their higher effective refractive index contrast and more tightly confined guided modes. The theoretical predictions are supported by experimental results for second harmonic generation (SHG) at room temperature and for light-induced detuning characteristics of the phase-matching wavelength.