Electrical Spin Transport in n-Doped In 0.53 Ga 0.47 As Channels
Electrical Spin Transport in n-Doped In 0.53 Ga 0.47 As Channels
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DOI：
10.4283/jmag.2009.14.1.023
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发表时间：
2009-03
影响因子：
0.5
通讯作者：
Y. Park;H. Koo;Kyungho Kim;Hyung-jun Kim;S. Han
中科院分区：
文献类型：
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作者：
Y. Park;H. Koo;Kyungho Kim;Hyung-jun Kim;S. Han
自旋注入从铁磁体到n-掺杂In 0.53 Ga 0.47 As沟道的铁磁检测器进行了电检测。在T = 20 K时，采用非局域和局域自旋阀测量，当偏置电流为1 μ s时，观察到非局域信号为2 μ s，局域自旋阀信号为0.041%。能带计算和体沟道中的Shubnikov-de哈斯振荡测量表明，栅控自旋-轨道相互作用不足以控制自旋进动，但它可能是利用自旋积累和扩散的逻辑器件的有价值的候选者。
Spin injection from a ferromagnet into an n-doped In 0.53 Ga 0.47 As channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of 2 ㎶ and a local spin valve signal of 0.041% were observed when the bias current was 1 ㎃. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.