Demonstration of 4H-SiC power bipolar junction transistors
Demonstration of 4H-SiC power bipolar junction transistors
复制标题
4H-SiC功率双极结型晶体管演示
DOI：
10.1049/el:20001059
复制
发表时间：
2000
影响因子：
1.1
通讯作者：
Jian H. Zhao
中科院分区：
文献类型：
--
作者：
Y. Luo;L. Fursin;Jian H. Zhao
首次展示 4H-SiC 功率双极结晶体管。描述了详细的器件结构以及多步结终端延伸设计尺寸。测量并报告了所制造的双极结型晶体管在室温和 250/spl deg/C 下的 DC I-V 特性。
The first demonstration of 4H-SiC power bipolar junction transistors is reported. The detailed device structure along with the multi-step junction termination extension design dimensions is described. The DC I-V characteristics at room temperature and 250/spl deg/C of the fabricated bipolar junction transistors are measured and reported.