Acid-based etching of silicon wafers: Mass-transfer and kinetic effects
Acid-based etching of silicon wafers: Mass-transfer and kinetic effects
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DOI：
10.1149/1.1393172
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发表时间：
2000-01-01
影响因子：
3.9
通讯作者：
Erk, HF
中科院分区：
文献类型：
--
作者：
Kulkarni, MS;Erk, HF
研究了硅在三相酸基湿法蚀刻中的输运和动力学效应。反应物克服液相传质阻力和动力学阻力完成反应。反应形成的气泡附着在表面的随机位置上。因此，从反应物表面的掩膜部分。这种气泡掩蔽效应被建模为气泡传输阻力与液相传质阻力并行作用。这些输运效应被集中成一个有效的质量输运阻力，它与动力阻力串联起作用。结果表明，蚀刻表面形貌是有效传质阻力与动力学阻力之比的函数。粗糙的表面是由波峰和波谷组成的。理论上说，在传质影响下，峰值处的蚀刻速率高于谷处的蚀刻速率。因此，表面是化学发表的。结果表明：抛光效率随传质阻力与动力阻力之比的增大而增大，达到最大值后减小；用所建立的现象模型和实验数据解释了传质和动力学对表面粗糙度和光泽度的影响。(C) 2000电化学学会。s0013 - 4651(99) 02-063-7。版权所有。
A study to understand the transport and kinetic effects in three-phase, acid-based wet etching of silicon has been accomplished. Reactants overcome the liquid-phase mass-transfer resistance and the kinetic resistance to complete the reaction. The gaseous bubbles formed by the reaction adhere to random sites on the surface and. thus, mask fraction of the surface from the reactants. This bubble masking effect is modeled as the bubble transport resistance that acts in parallel with the liquid-phase mass-transfer resistance. These transport effects are lumped into an effective mass-transport resistance, which acts in series with the kinetic resistance. it is shown that the etched surface morphology is a function of the ratio of the effective mass-transport resistance to the kinetic resistance. A rough surface is a field of peaks and valleys. It is theorized that under mass-transfer influence, etch rates at peaks are higher than etch rates at valleys. Hence, the surface is chemically published. It is shown that the polishing efficiency increases with increasing ratio of mass-transfer resistance to the kinetic resistance, reaches a maximum and then decreases. Effects of mass-transfer and kinetics on the surface roughness and gloss are explained by both the developed phenomenological model and experimental data. (C) 2000 The Electrochemical Society. S0013-4651 (99)02-063-7. All rights reserved.