Diffusion profiles of boron implanted into plasma-etched silicon surfaces
Diffusion profiles of boron implanted into plasma-etched silicon surfaces
复制标题
注入等离子蚀刻硅表面的硼的扩散剖面
DOI：
10.1109/16.129114
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发表时间：
1992
影响因子：
3.1
通讯作者：
K. Shenai
中科院分区：
文献类型：
--
作者：
K. Shenai
研究了低剂量硼注入等离子体刻蚀硅表面的扩散。在CHF/sub 3//CO/sub 2/等离子体中对硅表面上的热生长氧化膜进行等离子体蚀刻。样品被连续注入和激活硼和砷，以形成n/sup +/-p-n结，以获得一系列的表面掺杂分布和结深度。使用二次离子质谱法（西姆斯）和铺展电阻分布（SRP）测量化学和电活性掺杂剂浓度。用透射电子显微镜（TEM）表征了硅表面损伤。据观察，硼的扩散分布显着影响注入到等离子体蚀刻的硅表面时。在湿法化学蚀刻剂中蚀刻氧化膜的样品提供了用于评价等离子体蚀刻工艺的效果的对照。这些结果表明，在等离子体蚀刻过程中产生的损伤可能引起硼扩散分布的变化。>
The diffusion of low-dose boron implanted into plasma-etched silicon surfaces is studied. The thermally grown oxide film on the silicon surface was plasma-etched in a CHF/sub 3//CO/sub 2/ plasma. The samples were successively implanted and activated with boron and arsenic to form n/sup +/-p-n junctions to obtain a range of surface doping profiles and junction depths. The chemical and electrically active dopant concentrations were measured using secondary ion-mass spectrometry (SIMS) and spreadings resistance profiling (SRP). The silicon surface damage was characterized using transmission electron microscopy (TEM). It was observed that the diffusion profiles of boron were significantly affected when implanted into plasma-etched silicon surfaces. The samples with oxide films etched in a wet chemical etchant provided the control for evaluating the effect of the plasma etching process. These results suggest that the damage created during the plasma etching process may have caused changes in the boron diffusion profiles. >