Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
复制标题
二次电子成像作为二维掺杂剂分析技术：回顾和更新
DOI：
10.1116/1.589811
复制
发表时间：
1998
影响因子：
1.4
通讯作者：
D. C. Collins
中科院分区：
文献类型：
--
作者：
D. Venables;H. Jain;D. C. Collins
半导体的二次电子（SE）成像揭示了n型和p型区域之间的对比度，可以作为二维掺杂剂分布技术的基础。在这篇文章中，最近的实验，解决灵敏度，空间分辨率，校准方法，p/n结的影响，和样品制备问题进行了审查和讨论的硼掺杂硅。此外，SE成像作为一种二维掺杂剂分布技术的成功应用的几个例子。
Secondary electron (SE) imaging of semiconductors reveals contrast between n- and p-type areas that can serve as the basis for a two-dimensional dopant profiling technique. In this article, recent experiments that address sensitivity, spatial resolution, calibration methodology, p/n junction effects, and sample preparation issues are reviewed and discussed for boron doped silicon. In addition, several examples of successful applications of SE imaging as a two-dimensional dopant profiling technique are presented.