An improved model for the surface potential and drain current in negative capacitance field effect transistors
An improved model for the surface potential and drain current in negative capacitance field effect transistors
复制标题
负电容场效应晶体管表面电位和漏极电流的改进模型
DOI：
10.1039/c6ra21955a
复制
发表时间：
2016
期刊：
影响因子：
3.9
通讯作者：
M. H. Tang
中科院分区：
文献类型：
--
作者：
Y. G. Xiao;D. B. Ma;J. Wang;G. Li;S. A. Yan;W. L. Zhang;Z. Li;M. H. Tang
通过引入掺杂浓度，提出了一种改进的负电容铁电场效应晶体管的表面电位和漏极电流模型。基于该模型研究了掺杂浓度和温度对NC-FeFET电特性的影响。结果表明，当衬底掺杂浓度从1017 m−3增加到1020 m−3时，金属-铁电-半导体NC-FeFET的亚阈值斜率增大，而驱动电流减小。此外，在290 ~ 380 K的温度范围内，电压放大逐渐缩小，导致亚阈值摆幅从51 mV dec−1增加到71 mV dec−1。这些结果表明，硅掺杂浓度和温度是优化nc - fet工作电压的两个关键因素。
An improved model for the surface potential and drain current in negative capacitance ferroelectric field effect transistors (NC-FeFETs) was presented by introducing the doping concentration. The influence of the doping concentration and temperature on the electric characteristics of NC-FeFET was investigated based on this model. The derived results demonstrated that the subthreshold slope of the metal–ferroelectric–semiconductor NC-FeFET increases, while the drive current decreases when the substrate doping concentration increases from 1017 m−3 to 1020 m−3. Additionally, in the temperature range from 290 K to 380 K, the voltage amplification gradually shrinks, resulting in the subthreshold swing increasing from 51 mV dec−1 to 71 mV dec−1. These results indicated that silicon doping concentration and temperature are two key factors for optimizing the operation voltage in NC-FeFETs.