Good rectifying characteristic in p–n junctions composed of La0.67Ca0.33MnO3−δ/Nb–0.7 wt %-doped SrTiO3
Good rectifying characteristic in p–n junctions composed of La0.67Ca0.33MnO3−δ/Nb–0.7 wt %-doped SrTiO3
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DOI：
10.1063/1.1606098
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发表时间：
2003-08
影响因子：
4
通讯作者：
F. Hu;Jin-Hua Gao;J. Sun;B. Shen
中科院分区：
文献类型：
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作者：
F. Hu;Jin-Hua Gao;J. Sun;B. Shen
采用La0.67Ca0.33MnO3−δ/ nb掺杂SrTiO3的简单异质外延结构制备了简单的p-n结。在这些结中，La0.67Ca0.33MnO3−δ由于缺氧而表现出半导体行为，而Nb-0.7 wt %掺杂的SrTiO3则表现出金属行为。这些结在5至350 K的宽温度范围内表现出良好的整流特性。一个有趣的观察是，整流行为几乎与温度无关。
Simple p–n junctions have been fabricated using a simple heteroepitaxial structure of La0.67Ca0.33MnO3−δ/Nb-doped SrTiO3. In such junctions, the La0.67Ca0.33MnO3−δ exhibits semiconductor behavior due to oxygen deficiency, whereas the Nb–0.7 wt %-doped SrTiO3 shows a metal behavior. These junctions demonstrate good rectifying characteristic in a wide temperature range from 5 to 350 K. An intriguing observation is that the rectifying behavior is nearly independent of temperature.