Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs
Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs
复制标题
InAlAs/InGaAs/InP基PHEMT的小信号模型及低噪声应用
DOI：
10.11972/j.issn.1001-9014.2018.06.008
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发表时间：
2018
影响因子：
0.7
通讯作者：
Lyu Xin
中科院分区：
文献类型：
--
作者：
Liu Jun;Yu Wei-Hua;Yang Song-Yuan;Hou Yan-Fei;Cui Da-Sheng;Lyu Xin
提出了一种改进的小信号模型，并采用100 nm InAlAs/InGaAs/InP基高电子迁移率晶体管（HEMT）工艺设计了W波段单片低噪声放大器（LNA）。为了提高S参数在低频下的拟合精度，小信号模型考虑了栅源二极管和栅漏二极管的差分电阻，分别用电阻R-fs和R-fd表示。基于该模型设计并制作了W波段低噪声放大器单片毫米波集成电路，验证了该模型的可行性。该放大器在92.5 GHz处的小信号峰值增益为14.4 dB，3 dB带宽为85至110 GHz。此外，MMIC还表现出良好的噪声特性，在88 GHz的噪声系数为4.1 dB，相关增益为13.8 dB。该放大器具有较宽的3dB带宽和较高的单级增益。
This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100 nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology. For improving the fitting accuracy of S-parameters in low frequency, the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes, which modeled by resistances R-fs and R-fd. A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model. The amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92.5 GHz and 3-dB bandwidth from 85 to 110 GHz. In addition, the MMIC also exhibits an excellent noise characteristic with the noise figure of 4.1 dB and the associate gain of 13.8 dB at 88 GHz. This MMIC amplifier shows wider 3-dB bandwidth and higher per-stage gain than others results at the similar band.