Nanometric diamond delta doping with boron
Nanometric diamond delta doping with boron
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DOI：
10.1002/pssr.201600329
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发表时间：
2017-01-01
影响因子：
2.8
通讯作者：
Jackman, Richard B.
中科院分区：
文献类型：
--
作者：
Butler, James E.;Vikharev, Anatoly;Jackman, Richard B.
由于金刚石具有高载流子迁移率、高耐压击穿性和高热扩散性，因此被期望用于有源半导体器件。利用金刚石作为半导体受到缺乏浅掺杂剂的阻碍，无法在室温下产生足够的电子载流子。在这项工作中，纳米厚的，重硼掺杂的外延金刚石“delta掺杂”层已被生长在超光滑的金刚石表面上，该表面表现出p型导电性，具有高达120 cm（2）/Vs的增强的霍尔迁移率和6 × 10（13）cm（-2）的片状载流子浓度，从而使一类新的有源金刚石电子器件成为可能。
Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial dia-mond 'delta doped' layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm(2)/Vs and sheet car-rier concentrations to 6 x 10(13) cm(- 2), thus enabling a new class of active diamond electronic devices.