Correlation of Stimulated H+-Desorption Threshold with Localized State Observed in Auger Line Shape-Si(100)-H
Correlation of Stimulated H+-Desorption Threshold with Localized State Observed in Auger Line Shape-Si(100)-H
复制标题
受激H解吸阈值与俄歇线形状-Si(100)-H中观察到的局域态的相关性
DOI：
10.1103/physrevb.26.896
复制
发表时间：
1982
影响因子：
3.7
通讯作者：
N. Stoffel
中科院分区：
文献类型：
--
作者：
H. H. Madden;D. R. Jennison;M. Traum;G. Margaritondo;N. Stoffel
我们报告的第一次观察到的本地化的两个空穴的电子激发共价键合的表面上。我们发现，该系统的电子刺激脱附阈值对应于局域态能量。这表明局域多空穴激发是扩展共价体系中重要的解离通道。
We report the first observation of a localized two-hole electronic excitation on a covalently bonded surface. We find that the electron-stimulated desorption threshold for this system corresponds to the localized state energy. This suggests that localized multihole excitations are important dissociation channels in extended covalent systems.