Periodic Si-CoSi2 eutectic structures
Periodic Si-CoSi2 eutectic structures
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周期性Si-CoSi2共晶结构
DOI：
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发表时间：
1987
期刊：
影响因子：
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通讯作者：
B. Ditchek
中科院分区：
文献类型：
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作者：
B. Ditchek
通过共晶薄膜定向凝固制备亚微米周期性Si-CoSi2结构。通过激光再结晶在氧化硅晶片上生长的薄膜在制备过程中没有出现先前遇到的烧蚀和裂纹。使用高达 17 cm/s 的生长速率可产生小至 60 nm 的层状周期。研究了层状结构中的缺陷与生长速率、固液界面形状和热老化的函数关系。
Submicron periodicity Si‐CoSi2 structures were fabricated by the directional solidification of eutectic thin films. The films, grown on oxidized Si wafers by laser recrystallization, were prepared without the ablation and cracking previously encountered. Using growth rates of up to 17 cm/s yielded lamellar periods as small as 60 nm. Defects in the lamellar structure were investigated as a function of growth rate, the shape of the solid–liquid interface, and thermal aging.