Influence of Cu vacancy on knit coir mat structured CuS as counter electrode for quantum dot sensitized solar cells.
Influence of Cu vacancy on knit coir mat structured CuS as counter electrode for quantum dot sensitized solar cells.
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DOI：
10.1021/am504615x
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发表时间：
2014-11
影响因子：
9.5
通讯作者：
A. Savariraj;Kodakkal Kannan Viswanathan;K. Prabakar
中科院分区：
文献类型：
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作者：
A. Savariraj;Kodakkal Kannan Viswanathan;K. Prabakar
通过化学浴沉积不同持续时间制备的针织椰壳状结构的CuS薄膜被用作量子点敏化太阳能电池的对电极。 4 h沉积的薄膜表现出更好的电化学和光伏性能，JSC、VOC和FF值为14.584 mA cm(-2)、0.566 V和54.57%，效率为4.53%。从紫外-可见吸收光谱中可以看出，CuS 薄膜在较长波长区域表现出自由载流子带内吸收。 CuS对电极性能的增强是由于S成分增加的Cu空位，而半导体中相对于电解质氧化还原电位的准费米能级是影响对电极电催化活性的原因之一。
Knit-coir-mat-like structured CuS thin films prepared by chemical bath deposition with different time duration were used as counter electrode in qunatum dot sensitized solar cells. The film deposited at 4 h exhibited better electrochemical and photovoltaic performance with JSC, VOC, and FF values of 14.584 mA cm(-2), 0.566 V, and 54.57% and efficiency of 4.53%. From the UV-vis absorption spectra, it is observed that CuS thin film exhibits free carrier intraband absorption in the longer wavelengh region. The enhanced performance of CuS counter electrodes is due to Cu vacancies with increased S composition, and the quasi-Fermi energy level in semiconductors with respect to electrolyte redox potential is one of the causes that affects the electrocatalytic activity of counter electrodes.