Controlled doping of graphene by impurity charge compensation via a polarized ferroelectric polymer
Controlled doping of graphene by impurity charge compensation via a polarized ferroelectric polymer
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DOI：
10.1063/5.0003099
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发表时间：
2020-03
影响因子：
3.2
通讯作者：
Kelotchi S. Figueroa;N. Pinto;Srinivas V. Mandyam;Meng-qiang Zhao;C. Wen;Paul Masih Das;Zhaoli Gao;M. Drndić;A. T. Charlie Johnson
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文献类型：
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作者：
Kelotchi S. Figueroa;N. Pinto;Srinivas V. Mandyam;Meng-qiang Zhao;C. Wen;Paul Masih Das;Zhaoli Gao;M. Drndić;A. T. Charlie Johnson
提出了一种通过操纵吸附杂质电荷来掺杂石墨烯的简单技术。利用场效应晶体管结构，铁电聚合物栅极的可控极化被用来补偿和中和一种类型的电荷。相反类型的未补偿电荷则掺杂石墨烯。该方法可以实现n型和p型掺杂，且具有非破坏性和可逆性。我们观察到n型掺杂剂浓度的变化为8 × 1012 cm−2，电子迁移率的变化为650%。电子和空穴迁移率与杂质浓度成反比，与理论预测一致。石墨烯的选择性掺杂可以通过在策略位置设计栅极并对其进行独立编程来实现。这样的电荷控制无需引入硬结，因此可以在连续的石墨烯薄膜上实现多个器件的无缝集成。提出了一种通过操纵吸附杂质电荷来掺杂石墨烯的简单技术。利用场效应晶体管结构，铁电聚合物栅极的可控极化被用来补偿和中和一种类型的电荷。相反类型的未补偿电荷则掺杂石墨烯。该方法可以实现n型和p型掺杂，且具有非破坏性和可逆性。我们观察到n型掺杂剂浓度的变化为8 × 1012 cm−2，电子迁移率的变化为650%。电子和空穴迁移率与杂质浓度成反比，与理论预测一致。石墨烯的选择性掺杂可以通过在策略位置设计栅极并对其进行独立编程来实现。这样的电荷控制无需引入硬结，因此可以在连续的石墨烯薄膜上实现多个器件的无缝集成。
A simple technique of doping graphene by manipulating adsorbed impurity charges is presented. Using a field effect transistor configuration, controlled polarization of a ferroelectric polymer gate is used to compensate and neutralize charges of one type. The uncompensated charges of the opposite type then dope graphene. Both n- and p-type doping are possible by this method, which is non-destructive and reversible. We observe a change in n-type dopant concentration of 8 × 1012 cm−2 and a change in electron mobility of 650%. The electron and hole mobilities are inversely proportional to the impurity concentration, as predicted by theory. Selective doping of graphene can be achieved using this method by patterning gate electrodes at strategic locations and programming them independently. Such charge control without introducing hard junctions, therefore, permits seamless integration of multiple devices on a continuous graphene film.A simple technique of doping graphene by manipulating adsorbed impurity charges is presented. Using a field effect transistor configuration, controlled polarization of a ferroelectric polymer gate is used to compensate and neutralize charges of one type. The uncompensated charges of the opposite type then dope graphene. Both n- and p-type doping are possible by this method, which is non-destructive and reversible. We observe a change in n-type dopant concentration of 8 × 1012 cm−2 and a change in electron mobility of 650%. The electron and hole mobilities are inversely proportional to the impurity concentration, as predicted by theory. Selective doping of graphene can be achieved using this method by patterning gate electrodes at strategic locations and programming them independently. Such charge control without introducing hard junctions, therefore, permits seamless integration of multiple devices on a continuous graphene film.