Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium
Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium
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DOI：
10.1021/cm303703r
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发表时间：
2013-07
影响因子：
8.6
通讯作者：
M. Reiners;Ke Xu;N. Aslam;A. Devi;R. Waser;S. Hoffmann‐Eifert
中科院分区：
文献类型：
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作者：
M. Reiners;Ke Xu;N. Aslam;A. Devi;R. Waser;S. Hoffmann‐Eifert
本文研究了以水蒸气为反应原料，四-二甲胺基钛[(NMe2)4-Ti，TDMAT]及其新开发的三(二甲氨基)-单-(N，N′-diisopropyl-dimethyl-amido-guanidinato)-titanium){[(N-IPR)2NMe2]Ti(NMe2)3，TiA3Gl}两种不同的酰胺基钛源，采用液体注射原子层沉积的方法生长二氧化钛。TDMAT和TiA3G1TDMAT和TiA3G1TDMAT的生长随着前驱体供应量的增加而明显饱和。与TDMAT相比，TiA3G1的ALD在300℃以下的GPC值表现出更高的稳定性，这与前驱体温度稳定性的改善相一致。这两个过程都显示出作为温度函数的最小增长率。在所有情况下，二氧化钛薄膜的残余碳和氮含量均为<；3个原子%。在三种材料上均表现出共形生长。
We studied the growth of TiO2 by liquid injection atomic layer deposition (ALD) utilizing two different amide-based titanium sources, tetrakis-dimethylamido-titanium [(NMe2)4-Ti, TDMAT] and its recently developed derivative, tris-(dimethylamido)-mono-(N,N′-diisopropyl-dimethyl-amido-guanidinato)-titanium {[(N-iPr)2NMe2]Ti(NMe2)3, TiA3G1}, with water vapor as counterreactant. A clear saturation of growth with an increasing precursor supply was found for TDMAT between 150 and 300 °C and for TiA3G1 between 150 and 330 °C. Representative growth per cycle (GPC) values at 250 °C were 0.041 and 0.044 nm/cycle, respectively. Compared to that of TDMAT, ALD of TiA3G1 exhibited a significantly higher stability in the GPC values up to 300 °C coinciding with an improved temperature stability of the precursor. Both processes showed a minimum of the growth rate as a function of temperature. In all cases, the residual carbon and nitrogen contents of the TiO2 films were <3 atom %. Conformal growth was demonstrated on thre...