Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching
Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching
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DOI：
10.1088/0957-4484/24/22/225305
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发表时间：
2013-06-07
期刊：
影响因子：
3.5
通讯作者：
Hsu, K.
中科院分区：
文献类型：
--
作者：
Azeredo, B. P.;Sadhu, J.;Hsu, K.
本文提出了一种非光刻方法来制备具有可控边壁轮廓和表面形貌的晶圆级单晶硅纳米线。该方法从银（Ag）薄膜热脱湿、金（Au）沉积和剥离开始，在Si衬底上生成大规模的金网。接下来是金属辅助化学蚀刻（MacEtch），其中金网作为催化剂，产生锥度可调至13度的光滑硅纳米线阵列。所制备的sinw的平均直径可控制在62 ~ 300 nm之间，标准差可小至13.6 nm，线阵的面积覆盖率可达46%。平均丝径的控制是通过控制金属网孔径来实现的，而金属网孔径的控制又通过调节初始薄膜厚度和沉积速率来实现。为了控制线材表面形貌，该方法增加了加工后的粗化步骤。这一步使用金纳米粒子和慢速MacEtch产生的rms表面粗糙度高达3.6 nm。
This paper presents a non-lithographic approach to generate wafer-scale single crystal silicon nanowires (SiNWs) with controlled sidewall profile and surface morphology. The approach begins with silver (Ag) thin-film thermal dewetting, gold (Au) deposition and lift-off to generate a large-scale Au mesh on Si substrates. This is followed by metal-assisted chemical etching (MacEtch), where the Au mesh serves as a catalyst to produce arrays of smooth Si nanowires with tunable taper up to 13 degrees. The mean diameter of the thus fabricated SiNWs can be controlled to range from 62 to 300 nm with standard deviations as small as 13.6 nm, and the areal coverage of the wire arrays can be up to 46%. Control of the mean wire diameter is achieved by controlling the pore diameter of the metallic mesh which is, in turn, controlled by adjusting the initial thin-film thickness and deposition rate. To control the wire surface morphology, a post-fabrication roughening step is added to the approach. This step uses Au nanoparticles and slow-rate MacEtch to produce rms surface roughness up to 3.6 nm.