Simultaneous lasing of interband and intersubband transitions in InAs∕AlSb quantum cascade laser structures
Simultaneous lasing of interband and intersubband transitions in InAs∕AlSb quantum cascade laser structures
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DOI：
10.1063/1.2838296
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发表时间：
2008-01
影响因子：
4
通讯作者：
K. Ohtani;H. Ohnishi;H. Ohno
中科院分区：
文献类型：
--
作者：
K. Ohtani;H. Ohnishi;H. Ohno
我们表明，n-InAs∕AlSb 量子级联激光器结构中的带间和子带间跃迁都可以具有足够的增益，从而能够在两个跃迁处同时发射激光。高电场会产生空穴，这是 InAs 中带间激光发射所必需的。注入部分的掺杂浓度对于控制器件中的电场至关重要，从而能够选择仅在子带间跃迁（高掺杂）、仅在带间跃迁（低掺杂）处产生激光以及在两个跃迁处同时产生激光（中掺杂）。
We show that both interband and intersubband transitions in n-InAs∕AlSb quantum cascade laser structures can have sufficient gain to enable simultaneous lasing at the two transitions. High electric fields generate holes, which are necessary for interband lasing in InAs. The doping concentration in the injection parts is shown to be critical for controlling the electric fields in the device, enabling the selection of lasing at the intersubband transition alone (high doping), at the interband transition alone (low doping), and simultaneous lasing at both transitions (intermediate doping).