Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors
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DOI：
10.1109/led.2015.2442293
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发表时间：
2015-06
期刊：
IEEE Electron Device Letters
影响因子：
4.9
通讯作者：
M. Uren;M. Caesar;S. Karboyan;P. Moens;P. Vanmeerbeek;Martin Kuball
M. Uren;M. Caesar;S. Karboyan;P. Moens;P. Vanmeerbeek;Martin Kuball
中科院分区：
工程技术2区
文献类型：
--
作者：
M. Uren;M. Caesar;S. Karboyan;P. Moens;P. Vanmeerbeek;Martin Kuball

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它是由实验支持的模拟表明，减少表面场效应，与补偿深受主，可以发生在硅基GaN掺杂的GaN功率开关AlGaN/GaN晶体管，提供有一个垂直的泄漏路径从2DEG的碳掺杂层。模拟表明，这种效应不存在于使用铁掺杂GaN缓冲层的器件中，这解释了碳掺杂器件的较高电压能力。
It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.