InSb as a γ-ray detector
InSb as a γ-ray detector
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InSb 作为 γ 射线探测器
DOI：
10.1016/0168-9002(86)90432-8
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发表时间：
1986
影响因子：
1.4
通讯作者：
W. McHarris
中科院分区：
文献类型：
--
作者：
W. McHarris
III-V型半导体InSb具有成为优良γ射线探测器的潜力，可能比Ge有以下几个因素的改进：分辨率，2倍；峰-康普顿比，12 ×；效率（每摩尔）9 ×。最近“本征”InSb的可用性，加上脉冲高度判别技术克服了对电荷收集的几何依赖，使得研究这种材料用于制造探测器的实用性成为可能。我们讨论它的优点和缺点。
The III-V semiconductor InSb has the potential for being a superior γ-ray detector, with a possible improvement over Ge by the factors: resolution, 2 ×; peak-to-Compton ratio, 12 ×; efficiency (per mole), 9 ×. Recent availability of “intrinsic” InSb, coupled with pulse-height discrimination techniques to overcome geometrical dependence on charge collection, makes it feasible to investigate the practicality of this material for producing detectors. We discuss its advantages and disadvantages.