Dependence of the Carrier Transport Characteristics on the Buried Layer Thickness in Ambipolar Double-Layer Organic Field-Effect Transistors Investigated by Electrical and Optical Measurements
Dependence of the Carrier Transport Characteristics on the Buried Layer Thickness in Ambipolar Double-Layer Organic Field-Effect Transistors Investigated by Electrical and Optical Measurements
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DOI：
10.7567/jjap.52.05dc01
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发表时间：
2013-05
影响因子：
1.5
通讯作者：
Le Zhang;D. Taguchi;T. Manaka;M. Iwamoto
中科院分区：
文献类型：
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作者：
Le Zhang;D. Taguchi;T. Manaka;M. Iwamoto
利用电流-电压（I-V）测量和光调制光谱，研究了C60/并五苯双极性双层有机场效应晶体管（OFFET）中载流子行为与并五苯埋层厚度的关系.发现并五苯埋层不仅作为空穴传输层，而且还解释了C60/并五苯界面的性质。空穴和电子的行为表现出不同的厚度依赖于掩埋的并五苯层，这意味着空间上分离的导电路径的存在。结果表明，注入的空穴沿着并五苯/栅介质界面传输，并五苯埋层厚度和C60上层对空穴传输影响不大;注入的电子在C60/并五苯界面积累，并五苯埋层厚度和界面条件对电子传输影响较大.此外，有人建议，掩埋的并五苯层的增强的表面粗糙度是负责观察到的电子行为，特别是当dmax>10 nm时。
By using current–voltage (I–V) measurements and optical modulation spectroscopy, we investigated the dependence of the carrier behaviour on the film thickness of the buried pentacene layer in C60/pentacene ambipolar double-layer organic field-effect transistors (OFETs). It was found that the buried pentacene layer not only acted as a hole transport layer, but also accounted for the properties of the C60/pentacene interface. The hole and electron behaviour exhibited different thickness dependence on the buried pentacene layer, implying the presence of the spatially separated conduction paths. It was suggested that the injected holes transported along the pentacene/gate dielectric interface, which were little affected by the buried pentacene layer thickness or the upper C60 layer; while, the injected electrons accumulated at the C60/pentacene interface, which were sensitive to the interfacial conditions or the buried pentacene layer. Furthermore, it was suggested that the enhanced surface roughness of the buried pentacene layer was responsible for the observed electron behaviour, especially when dpent>10 nm.