Metal-semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses
Metal-semiconductor interfaces in CdTe crystals and modification of their properties by laser pulses
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DOI：
10.1016/j.apsusc.2004.10.113
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发表时间：
2005-05
影响因子：
6.7
通讯作者：
V. Gnatyuk;T. Aoki;Y. Hatanaka;O. Vlasenko
中科院分区：
文献类型：
--
作者：
V. Gnatyuk;T. Aoki;Y. Hatanaka;O. Vlasenko
研究了高阻CdTe（111）晶体在不同电极（Ag、In和Au）上的电流-电压特性。研究了纳秒级KrF激光脉冲对金属-CdTe界面的影响。激光辐照CdTe晶体前后电极沉积分别改变了近表面和界面区的结构，并改变了势垒结构的CVC。从In接触侧照射CdTe晶体导致In掺杂。激光形成的In/CdTe/Au二极管结构具有良好的整流性能，有望用于核辐射探测器。
Current–voltage characteristics (CVC) have been investigated in high-resistivity CdTe(111) crystals with different electrodes (Ag, In and Au) which were deposited before different surface treatments. An influence of laser irradiation with nanosecond KrF laser pulses on the metal–CdTe interfaces, has been studied. Laser irradiation of CdTe crystals before and after electrodes deposition transformed the structure of the near surface and interface regions, respectively, and changed CVC of the barrier structures. Irradiation of CdTe crystals from the In contact side resulted in In doping. The laser-formed In/CdTe/Au diode structures had good rectification properties and showed promise for nuclear radiation detectors.