Effects of stacking variations on the lattice dynamics of InAs nanowires
Effects of stacking variations on the lattice dynamics of InAs nanowires
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DOI：
10.1103/physrevb.84.155301
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发表时间：
2011-10-04
影响因子：
3.7
通讯作者：
Abstreiter, G.
中科院分区：
文献类型：
--
作者：
Hoermann, N. G.;Zardo, I.;Abstreiter, G.
利用拉曼光谱研究了单根InAs纳米线的光学声子性质及其与晶体结构的关系。该纳米线是在Si（111）上通过分子束外延生长的，没有外来催化剂，并且具有纤锌矿和氧化锌夹杂物的堆叠顺序的变化。具体的新功能，如TO频移和选择规则不同，从散装InAs，观察。进一步的偏振相关的测量揭示了四个单独的峰的存在下，在光学声子的能量范围内的InAs。通过对拉曼散射强度进行全方位角依赖性分析，可以确定这些峰的各个对称性行为，即B（1）（H）、E（2）（H）、TO（A（1）+ E（1））和LO（A（1））。B（1）（H）和E（2）（H）模式被分配给纤锌矿型模式。
The optical phonon properties of single InAs nanowires and their relation to the crystal structure are studied by means of Raman spectroscopy. The nanowires were grown by molecular beam epitaxy on Si (111) without foreign catalyst and exhibit variations in the stacking sequence with wurtzite and zincblende inclusions. Specific new features, such as a TO frequency shift and selection rules different from bulk InAs, are observed. Further polarization-dependent measurements reveal the existence of four individual peaks in the optical phonon energy range of InAs. By performing a full azimuthal-dependence analysis of the Raman scattering intensity, the individual symmetry behavior of these peaks could be determined, namely the B(1)(H), E(2)(H), TO (A(1) + E(1)), and LO (A(1)). The B(1)(H) and E(2)(H) modes are assigned to wurtzite-type modes.