Chern number of thin films of the topological insulator Bi2Se3
Chern number of thin films of the topological insulator Bi2Se3
复制标题
DOI：
10.1103/physrevb.82.165104
复制
发表时间：
2010-10-05
影响因子：
3.7
通讯作者：
Xing, D. Y.
中科院分区：
文献类型：
--
作者：
Li, Huichao;Sheng, L.;Xing, D. Y.
在Bi2Se3薄膜中，同位旋扇区具有非平凡的拓扑性质，通常用Z(2)指数来表征。广义同位旋陈恩数[E]。Prodan、phy。Rev. B 80, 125327(2009)]是在结构反演对称性被打破且同位旋算符(tau) / cap (z)不守恒的一般情况下计算的。所得到的解析形式清楚地揭示了同位旋陈恩数与Z2指数之间的联系。进一步证明了基于同位旋陈恩数的拓扑表征完全符合不同状态下边缘态的特征谱。
In thin films of Bi2Se3, the isospin sectors have nontrivial topological properties, which are conventionally characterized by the Z(2) index. The generalized isospin Chern number [E. Prodan, Phys. Rev. B 80, 125327 (2009)] is calculated in the general case where the structural inversion symmetry is broken and the isospin operator (tau) over cap (z) is not conserved. The analytical formalism obtained reveals clearly the connection between the isospin Chern number and the Z2 index. We further demonstrate that the topological characterization based on the isospin Chern number fully agrees with the characteristic spectrum of the edge states in different regimes.