Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3/Nb:SrTiO3 and SrRuO3/Nb:SrTiO3 determined by in situ photoemission spectroscopy
Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3/Nb:SrTiO3 and SrRuO3/Nb:SrTiO3 determined by in situ photoemission spectroscopy
复制标题
DOI：
10.1063/1.2717517
复制
发表时间：
2007-03-26
影响因子：
4
通讯作者：
Oshima, M.
中科院分区：
文献类型：
--
作者：
Minohara, M.;Ohkubo, I.;Oshima, M.
作者报告了使用原位光电发射在掺铌 SrTiO3 (Nb:STO) 半导体衬底上铁磁金属氧化物 [半金属铁磁体 La0.6Sr0.4MnO3 (LSMO) 和巡回铁磁体 SrRuO3 (SRO)] 的外延肖特基结的能带图 光谱学。理想的肖特基势垒形成于 SRO/Nb:STO 结中，肖特基势垒高度 (SBH) 为 1.2 +/- 0.1 eV，而 LSMO/Nb:STO 的测量 SBH (1.2 +/- 0.1 eV) 远大于肖特基-莫特规则的预测 (0.7 +/- 0.1 eV)。这些结果表明在 LSMO/Nb:STO 界面处形成了一定的界面偶极子。 (c) 2007 年美国物理研究所。
The authors report on the band diagram for epitaxial Schottky junctions of ferromagnetic metallic oxides [half-metallic ferromagnet La0.6Sr0.4MnO3 (LSMO) and itinerant ferromagnet SrRuO3 (SRO)] on Nb-doped SrTiO3 (Nb:STO) semiconductor substrates using in situ photoemission spectroscopy. The ideal Schottky barrier is formed in SRO/Nb:STO junctions with Schottky barrier height (SBH) of 1.2 +/- 0.1 eV, while the measured SBH of LSMO/Nb:STO (1.2 +/- 0.1 eV) is much larger than the prediction from the Schottky-Mott rule (0.7 +/- 0.1 eV). These results suggest that a certain interface dipole is formed at the LSMO/Nb:STO interface. (c) 2007 American Institute of Physics.